PART |
Description |
Maker |
GS8342S36GE-250I GS8342S09E-200I GS8342S09GE-200I |
36Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 4M X 8 STANDARD SRAM, 0.5 ns, PBGA165 36Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 18 STANDARD SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8182Q18D-200I GSITECHNOLOGY-GS8182Q36D-133IT |
18Mb Burst of 2 SigmaQuad-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4 18Mb Pipelined DDR垄芒II SRAM Burst of 4
|
Integrated Device Technology
|
GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209 256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器 256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209 256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的) 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS8162V18B GS8162V36B |
18Mb Burst SRAMs
|
GSI Technology
|
GS8161ZV18B GS8161ZV32B GS8161ZV36B |
18Mb Burst SRAMs
|
GSI Technology
|
GS8161ZV36C GS8161ZV18C |
18Mb Burst SRAMs
|
GSI Technology
|
GS8162ZV72C |
18Mb Burst SRAMs
|
GSI Technology
|
GS8162Z18 GS8162Z36 GS8162Z72 |
18Mb Burst SRAMs
|
GSI Technology
|